Atomic layer deposition of conductive and semiconductive oxides
نویسندگان
چکیده
Conductive and semiconductive oxides constitute a class of materials which the electrical conductivity optical transparency can be modulated through material design (e.g., doping alloying) external influences gating in transistor or gas exposure sensor). These (semi)conductive oxides, often categorized as amorphous oxide semiconductors transparent conductive have, therefore, been commonplace in, for example, solar cells displays, well an increasing variety other applications including memory, logic, photonics, sensing. Among various deposition techniques, use atomic layer (ALD) has gaining popularity recent years. Specifically since early 2000s, many ALD processes doped compound metal have developed. The interest such prepared by most likely attributed to distinct merits ALD, low-temperature processing, excellent uniformity conformality, accurate control over level composition. Moreover, device dimensions shrink need high-quality, ultrathin becomes ever more important. stem directly from self-limiting nature surface chemistry that drives growth. On hand, strong role growth mechanism brings intricacies, detailed understanding these aspects vital development high-quality ALD. Examples effects occur during include delays, clustering dopants, interruption grain doping. Such accounted mitigated, while on there are also clear cases where leveraged achieve enhanced new functionality. In this review paper, overview library emerged is presented. Available precursor chemistries, dopants achieved film properties—most notably carrier densities (field-effect) mobilities films—are A selection important showcased, their effect properties highlighted. Mitigation improvement strategies negative This done case studies clearly illustrate effects, drawing both literature our own work.
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ژورنال
عنوان ژورنال: Applied physics reviews
سال: 2022
ISSN: ['1931-9401']
DOI: https://doi.org/10.1063/5.0116732